1.25G 1310nm ROSA

Datasheet Rev.001

FEATURES:

• Single +3.3V power supply

• Operates to 1.25Gbps NRZ rates

• Transimpedance gain 20KOhm into 100ohm

   differential load

APPLICATIONS:

• Gigabit Ethernet

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

Storage Temperature

-40°C ~ + 100°C

Operating Temperature

-40 ºC ~ +85°C

Max Supply Voltage(Vcc-GND)

-0.5V ~4.5V

Voltage at either output

-0.5V~4.0V

Peak input Optical Power

+6dBm

Lead Soldering Temperature

260°C(Max)

Lead Soldering Duration

 10sec(Max)

ESD Level(HBM)

 2000v


ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA= -40~85 °C)

Parameter

 Symbol

Min

 Typ.

Max

Unit

Conditions

Icc current

Icc

-

26

30

mA

 

Differential impedance

Z

-

100

-

Ω

 

Bandwidth (3dB)

BW

-

1.0

-

GHz

 

Low frequency cutoff

BWL

-

10.0

 

KHz

 

Differential transimpedance

Tz

-

20

-

 

Differenial output voltage

Vout

-

300

 

mVp-p

 


 OPTICAL CHARACTERISTICS(Unless otherwise specified, TA= 25 °C)


Parameter

Symbol

Min

 Typ.

Max

Unit

Conditions

Average unstressed optical sensitivity

Psens

-

-26.0

-24.0

dBm

Light source:1310nm
1.25Gbs (Note1,2)

Optical overload(OMA)

Povrld

+2.5

3.5

 

dBm

(Note 1)


 Notes: 1. Typical values defined as a typical process, Case temperature at 25C and Vcc at 3.3V while max. and min. values are under the worst or best case process, Power supply and junction temperature for the parameter specified. 2. The state performance should be achievable dependent upon the RF environment in which the user packages the ROSA.


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