1.25G 1310nm ROSA

Datasheet Rev.001

FEATURES:

• Single +3.3V power supply

• Operates to 1.25Gbps NRZ rates

• Transimpedance gain 20KOhm into 100ohm

differential load

APPLICATIONS:

• Gigabit Ethernet

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

Storage Temperature

-40°C ~ + 100°C

Operating Temperature

-40 ºC ~ +85°C

Max Supply Voltage(Vcc-GND)

-0.5V ~4.5V

Voltage at either output

-0.5V~4.0V

Peak input Optical Power

+6dBm

Lead Soldering Temperature

260°C(Max)

Lead Soldering Duration

10sec(Max)

ESD Level(HBM)

2000v

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA= -40~85 °C)

Parameter

Symbol

Min

Typ.

Max

Unit

Conditions

Icc current

Icc

Differential impedance

100

Bandwidth (3dB)

1.0

GHz

Low frequency cutoff

BW_L

10.0

KHz

Differential transimpedance

kΩ

Differenial output voltage

Vout

300

mVp-p

OPTICAL CHARACTERISTICS(Unless otherwise specified, TA= 25 °C)

Parameter

Symbol

Min

Typ.

Max

Unit

Conditions

Average unstressed optical sensitivity

Psens

-26.0

-24.0

dBm

Light source:1310nm
1.25Gbs (Note1,2)

Optical overload(OMA)

Povrld

+2.5

3.5

dBm

(Note 1)

Notes: 1. Typical values defined as a typical process, Case temperature at 25C and Vcc at 3.3V while max. and min. values are under the worst or best case process, Power supply and junction temperature for the parameter specified. 2. The state performance should be achievable dependent upon the RF environment in which the user packages the ROSA.

10G 1310nm 4L DFB LC-TOSA

(TECHNICAL SPECIFICATIONS DATASHEET REV.001)

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